Browsing by Author Diniz J.A.

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PreviewIssue DateTitleAuthor(s)AdvisorType
2008Dc Performance And Low Frequency Noise In N-mosfets Using Self-aligned Poly-si/sige GateJimenez H.G.; Manera L.T.; Teixeira R.C.; Rautemberg M.F.; Diniz J.A.; Doi I.; Tatsch P.J.; Figueroa H.E.; Swart J.W.-Artigo de evento
2008Characteristics Of Titanium Oxide Gate Nmosfet Formed By E-beam Evaporation With Additional Rapid Thermal Oxidation And AnnealingDe Barros A.D.; Miyoshi J.; Wada R.; Cavarsan F.A.; Doi I.; Diniz J.A.-Artigo de evento
2014Optically Controlled Reconfigurable Antenna Array Based On E-shaped ElementsSodre Junior A.C.; Feliciano Da Costa I.; Manera L.T.; Diniz J.A.-Artigo de periódico
2014Thin Titanium Oxide Films Obtained By Rtp And By SputteringCesar R.R.; Barros A.D.; Doi I.; Diniz J.A.; Swart J.W.-Artigo de evento
2014Effect Of Annealing Time On Memory Behavior Of Mos Structures Based On Ge NanoparticlesMederos M.; Mestanza S.N.M.; Doi I.; Diniz J.A.-Artigo de evento
200621st International Symposium On Microelectronics Technology And Devices, Sbmicro 2006: PrefaceDiniz J.A.; Fernandes A.O.; De Lima Monteiro D.W.; French P.J.-Editorial
2005Low Electrical Resistivity Polycrystalline Sige Films Obtained By Vertical Lpcvd For Mos DevicesTeixeira R.C.; Doi I.; Zakia M.B.P.; Diniz J.A.; Swart J.W.-Artigo de evento
2009The Influence Of Poly-si/sige Gate In Threshold, Sub-threshold Parameters And Low Frequency Noise In P-mosfetsJimenez H.G.; Manera L.T.; Rautemberg M.F.; Diniz J.A.; Doi I.; Tatsch P.J.; Figueroa H.E.; Swart J.W.-Artigo de evento
2009Fabrication And Characterization Of Active Pixel Sensors (aps) Using Simple Metal Gate Nmos TechnologyFurtado A.S.O.; Diniz J.A.; De Lima Monteiro D.W.-Artigo de evento
2005Thermal Stability Of Ni(pt) Silicide Films Formed On Poly-siDoi I.; Teixeira R.C.; Santos R.E.; Diniz J.A.; Swart J.W.; Santos Filho S.G.-Artigo de evento
2006Characterization And Modeling Of Antireflective Coatings Of Si O 2, Si3 N4, And Si Ox Ny Deposited By Electron Cyclotron Resonance Enhanced Plasma Chemical Vapor DepositionMestanza S.N.M.; Obrador M.P.; Rodriguez E.; Biasotto C.; Doi I.; Diniz J.A.; Swart J.W.-Artigo de periódico
2007Structural And Surface Properties Of Si1-xgex Thin Films Obtained By Reduced Pressure CvdTeixeira R.C.; Doi I.; Diniz J.A.; Swart J.W.; Zakia M.B.P.-Artigo de periódico
2008Surface Passivation Of Ingap/gaas Hbt Using Silicon-nitride Film Deposited By Ecr-cvd PlasmaManera L.T.; Zoccal L.B.; Diniz J.A.; Tatsch P.J.; Doi I.-Artigo de periódico
2010Selective Spectral Detection Of Continuum Terahertz RadiationKaufmann P.; Marcon R.; Marun A.; Kudaka A.S.; Bortolucci E.; Zakia M.B.; Diniz J.A.; Cassiano M.M.; Pereyra P.; Godoy R.; Timofeevsky A.V.; Nikolaev V.A.; Pereira Alves Da Silva A.M.; Fernandes L.O.T.-Artigo de evento
2012Solar-t : Terahertz Photometers To Observe Solar Flare Emission On Stratospheric Balloon FlightsKaufmann P.; Abrantes A.; Bortolucci E.C.; Correia E.; Diniz J.A.; Fernandez G.; Fernandes L.O.T.; Gimenez De Castro C.G.; Godoy R.; Hurford G.; Kudaka A.S.; Lebedev M.; Lin R.P.; MacHado N.; Makhmutov V.S.; Marcon R.; Marun A.; Nicolaev V.A.; Pereyra P.; Raulin J.-P.; Da Silva C.M.; Shih A.; Stozkhov Y.I.; Swart J.W.; Timofeevsky A.V.; Valio A.; Villelad T.; Zakia M.B.-Artigo de evento
2004Micro-raman Stress Characterization Of Polycrystalline Silicon Films Grown At High TemperatureTeixeira R.C.; Doi I.; Zakia M.B.P.; Diniz J.A.; Swart J.W.-Artigo de periódico
2004High Performance Active Pixel Sensors Fabricated In A Standard 2.0 μm Cmos TechnologyMestanza S.N.M.; Jimenez H.G.; IFSilva; Diniz J.A.; Doi I.; Swart J.W.-Artigo de evento
1997Deposition Of Silicon Nitride By Low-pressure Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition In N2/ar/sih4Moshkalyov S.A.; Diniz J.A.; Swart J.W.; Tatsch P.J.; Machida M.-Artigo de periódico
2005Morphological And Electrical Study Of Poly-sige Alloy Deposited By Vertical LpcvdTeixeira R.C.; Doi I.; Zakia M.B.P.; Diniz J.A.-Artigo de evento
2004Silicon Oxynitride Gate-dielectric Made By Ecr Plasma OxynitridationManera G.A.; Diniz J.A.; Moshkalyov S.A.; Doi I.; Swart J.W.-Artigo de evento