Browsing by Author Doi I.

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PreviewIssue DateTitleAuthor(s)AdvisorType
2008Dc Performance And Low Frequency Noise In N-mosfets Using Self-aligned Poly-si/sige GateJimenez H.G.; Manera L.T.; Teixeira R.C.; Rautemberg M.F.; Diniz J.A.; Doi I.; Tatsch P.J.; Figueroa H.E.; Swart J.W.-Artigo de evento
2008Characteristics Of Titanium Oxide Gate Nmosfet Formed By E-beam Evaporation With Additional Rapid Thermal Oxidation And AnnealingDe Barros A.D.; Miyoshi J.; Wada R.; Cavarsan F.A.; Doi I.; Diniz J.A.-Artigo de evento
2014Thin Titanium Oxide Films Obtained By Rtp And By SputteringCesar R.R.; Barros A.D.; Doi I.; Diniz J.A.; Swart J.W.-Artigo de evento
2014Effect Of Annealing Time On Memory Behavior Of Mos Structures Based On Ge NanoparticlesMederos M.; Mestanza S.N.M.; Doi I.; Diniz J.A.-Artigo de evento
2005Low Electrical Resistivity Polycrystalline Sige Films Obtained By Vertical Lpcvd For Mos DevicesTeixeira R.C.; Doi I.; Zakia M.B.P.; Diniz J.A.; Swart J.W.-Artigo de evento
1996Microstructural Investigation Of Porous Silicon Depth Profile By Direct Surface Force MicroscopyChang D.C.; Baranauskas V.; Doi I.; Prohaska T.-Artigo de evento
1994Morphological Studies Of Laser Etching Processes In Self Sustained Cvd Diamond WafersBaranauskas V.; Peled A.; Trava-Airoldi V.J.; Lima C.A.S.; Doi I.; Corat E.J.-Artigo de periódico
2009The Influence Of Poly-si/sige Gate In Threshold, Sub-threshold Parameters And Low Frequency Noise In P-mosfetsJimenez H.G.; Manera L.T.; Rautemberg M.F.; Diniz J.A.; Doi I.; Tatsch P.J.; Figueroa H.E.; Swart J.W.-Artigo de evento
2005Thermal Stability Of Ni(pt) Silicide Films Formed On Poly-siDoi I.; Teixeira R.C.; Santos R.E.; Diniz J.A.; Swart J.W.; Santos Filho S.G.-Artigo de evento
2006Sem/eds Characterization Of Ni And Ni/pt Silicide FormationDos Santos R.E.; Doi I.; Swart J.W.; Dos Santos Filho S.G.-Artigo de evento
2006Characterization And Modeling Of Antireflective Coatings Of Si O 2, Si3 N4, And Si Ox Ny Deposited By Electron Cyclotron Resonance Enhanced Plasma Chemical Vapor DepositionMestanza S.N.M.; Obrador M.P.; Rodriguez E.; Biasotto C.; Doi I.; Diniz J.A.; Swart J.W.-Artigo de periódico
2007Structural And Surface Properties Of Si1-xgex Thin Films Obtained By Reduced Pressure CvdTeixeira R.C.; Doi I.; Diniz J.A.; Swart J.W.; Zakia M.B.P.-Artigo de periódico
2008Surface Passivation Of Ingap/gaas Hbt Using Silicon-nitride Film Deposited By Ecr-cvd PlasmaManera L.T.; Zoccal L.B.; Diniz J.A.; Tatsch P.J.; Doi I.-Artigo de periódico
2004Micro-raman Stress Characterization Of Polycrystalline Silicon Films Grown At High TemperatureTeixeira R.C.; Doi I.; Zakia M.B.P.; Diniz J.A.; Swart J.W.-Artigo de periódico
2004High Performance Active Pixel Sensors Fabricated In A Standard 2.0 μm Cmos TechnologyMestanza S.N.M.; Jimenez H.G.; IFSilva; Diniz J.A.; Doi I.; Swart J.W.-Artigo de evento
2005Morphological And Electrical Study Of Poly-sige Alloy Deposited By Vertical LpcvdTeixeira R.C.; Doi I.; Zakia M.B.P.; Diniz J.A.-Artigo de evento
2004Silicon Oxynitride Gate-dielectric Made By Ecr Plasma OxynitridationManera G.A.; Diniz J.A.; Moshkalyov S.A.; Doi I.; Swart J.W.-Artigo de evento
2004Uncooled Thermal Infrared Detector For Detection Of Far-infrared RadiationNeli R.R.; Doi I.; Melo A.M.; Arbex C.J.N.; Zakia M.B.P.; Kaufmann P.; Diniz J.A.; Swart J.W.-Artigo de evento
2004High Sensitivity Obtained By Three-color Detector Aps-cmos Using Antireflective CoatingMestanza S.N.M.; Biasotto C.; Costa A.C.; Dias G.O.; Doi I.; Diniz J.A.; Swart J.W.-Artigo de evento
2004Ultra-thin Silicon Oxynitride Gate-dielectric Made By Ecr PlasmasManera G.A.; Diniz J.A.; Doi I.; Swart J.W.-Artigo de evento