Browsing by Author Moshkalyov S.A.

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PreviewIssue DateTitleAuthor(s)AdvisorType
1996A Contribution Of Vibrationally Excited Cl2 Molecules To Gaas Reactive Ion Etching In Cl2/arMoshkalyov S.A.; Machida M.; Lebedev S.V.; Campos D.O.-Artigo de periódico
1996Experimental Study Of The Pseudospark-produced Electron Beam For Material ProcessingLebedev S.V.; Machida M.; Moshkalyov S.A.; Campos D.O.-Artigo de evento
1996Optical Diagnostics For The Study Of Plasma Evolution In Linear Theta-pinch Tc-1Machida M.; Lebedev S.V.; Moshkalyov S.A.; Campos D.O.; Berni L.A.-Artigo de periódico
1996Investigation Of The Pseudospark Produced Intense Electron BeamLebedev S.V.; Machida M.; Moshkalyov S.A.; Campos D.O.-Artigo de evento
1996Effect Of Plasma Conditions On Reactive Ion Etching Of Gaas In Cl2/arMoshkalyov S.A.; Machida M.M.; Lebedev S.V.; Campos D.O.-Artigo de evento
1996The Application Of A Multipass System For Thomson Scattering Diagnostics In Magnetically Confined PlasmasCampos D.O.; Machida M.; Berni L.A.; Kantor M.; Moshkalyov S.A.; Lebedev S.V.-Artigo de periódico
1996Molecular Rayleigh Scattering As Calibration Method For Thomson Scattering ExperimentsBerni L.A.; Campos D.O.; Machida M.; Moshkalyov S.A.; Lebedev S.V.-Artigo de periódico
2006Study Of Mode Transitions In Inductively Coupled PlasmasDaltrini A.M.; Moshkalyov S.A.; Monteiro M.J.R.; Machida M.; Besseler E.-Artigo de evento
2006Comparison Of Plasma Parameters Obtained With Planar Probe And Optical SpectrometerSwart L.; Daltrini A.M.; Moshkalyov S.A.; Verdonck P.-Artigo de evento
2006Reactive Ion Etching Of Polycrystalline Silicon Using Thinning Technology In Fluorine Based MixturesNunes A.M.; Moshkalyov S.A.; Tatsch P.J.; Daltrini A.M.-Artigo de evento
2004Mechanisms Of Silicon Nitride Etching By Electron Cyclotron Resonance Plasmas Using Sf6- And Nf3-based Gas MixturesReyes-Betanzo C.; Moshkalyov S.A.; Ramos A.C.S.; Swart J.W.-Artigo de evento
2004Carbon Nanotubes Growth By Chemical Vapor Deposition Using Thin Film Nickel CatalystMoshkalyov S.A.; Moreau A.L.D.; Guttierrez H.R.; Cotta M.A.; Swart J.W.-Artigo de periódico
2004Grabado Anisotrópico De Silicio Para Aplicación En Micromaquinado Usando Plasmas De Sf6/ch4/o2/ar Y Sf6/cf4/o2/arReyes-Betanzo C.; Moshkalyov S.A.; Swart J.W.-Artigo de periódico
1997Deposition Of Silicon Nitride By Low-pressure Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition In N2/ar/sih4Moshkalyov S.A.; Diniz J.A.; Swart J.W.; Tatsch P.J.; Machida M.-Artigo de periódico
1997Low-angle Thomson Scattering Experiment For Determination Of Plasma Electron Density And TemperatureCampos D.O.; Berni L.A.; Machida M.; Moshkalyov S.A.-Artigo de periódico
1997Study Of Ion-induced Secondary Photon Emission In Reactive Ion Etching ExperimentMoshkalyov S.A.; Machida M.; Campos D.O.-Artigo de periódico
2005Effects Of The Process Parameters On The Carbon Nanotubes Growth By Thermal CvdVerissimo C.; Moshkalyov S.A.; Ramos A.C.S.; Goncalves J.L.; Alves O.L.; Swart J.W.-Artigo de evento
2004Silicon Oxynitride Gate-dielectric Made By Ecr Plasma OxynitridationManera G.A.; Diniz J.A.; Moshkalyov S.A.; Doi I.; Swart J.W.-Artigo de evento
2004Study Of Carbon Nanotubes Growth By Atmospheric Pressure Chemical Vapor DepositionVerissimo C.; Moshkalyov S.A.; Ramos A.C.S.; Goncalves J.L.; Leon J.; Swart J.W.-Artigo de evento
2004Selective Etching Of Polycrystalline Silicon In A Hexode Type Plasma EtcherVieira R.; Martarello V.; Moshkalyov S.A.; Diniz J.A.; Swart J.W.-Artigo de evento