Browsing by Author Motisuke P.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

or enter first few letters:  
Showing results 1 to 20 of 24  next >
PreviewIssue DateTitleAuthor(s)AdvisorType
2008Giant Effective G -factor In Pbx Eu1-x Te Epitaxial FilmsHeredia E.; De Oliveira Rappl P.H.; Motisuke P.; Gazoto A.L.; Iikawa F.; Brasil M.J.S.P.-Artigo de periódico
1996Characterization Of Pbte Epitaxial Layers Grown On Baf2/caf2/si StructuresBoschetti C.; Abramof E.; Rappl P.H.O.; Bandeira I.N.; Motisuke P.; Hayashi M.A.; Cardoso L.P.-Artigo de periódico
1977Effect Of Exciton Condensation On The Optical Refraction Index Of CdsMotisuke P.; Arguello C.A.; Luzzi R.; Shaklee K.L.-Artigo de periódico
1983Radiative Recombination Of Deep Centers In Znse: InMeneses E.A.; Meneses G.D.; Motisuke P.-Artigo de periódico
1987Optical Losses In Solar Photoelectrochemical CellsDecker F.; Fracastoro-Decker M.; Moro J.R.; Motisuke P.-Artigo de periódico
1990Continuous To Bound Interband Transitions In δ-doped Gaas LayersBernussi A.A.; Brum J.A.; Motisuke P.; Basmaji P.; Li M.S.; Hipolito O.-Artigo de periódico
1986Pressure Dependence Of The Bowing Parameter Of Direct Band Gap Of Cdsexte1-xLemos V.; Moro J.R.; de Souza Q.A.G.; Motisuke P.-Artigo de periódico
1990Deep Center Characterization By Photo-induced Transient SpectroscopyBrasil M.J.S.P.; Motisuke P.-Artigo de periódico
1990Photoreflectance Measurements On Si δ-doped Gaas Samples Grown By Molecular-beam EpitaxyBernussi A.A.; Iikawa F.; Motisuke P.; Basmaji P.; Li M.S.; Hipolito O.-Artigo de periódico
1988Raman Scattering From Ingaas/gaas Strained-layer SuperlatticesIikawa F.; Cerdeira F.; Vazquez-Lopez C.; Motisuke P.; Sacilotti M.A.; Roth A.P.; Masut R.A.-Artigo de periódico
1985Electroluminescence Of Iii-v Single-crystal Semiconducting ElectrodesDecker F.; Prince F.; Motisuke P.-Artigo de periódico
1988Thermally Induced In/ga Interdiffusion In Inxga1-xas/gaas Strained Single Quantum Well Grown By LpmovpeIikawa F.; Motisuke P.; Brum J.A.; Sacilotti M.A.; Roth A.P.; Masut R.A.-Artigo de periódico
1990Mbe Growth And Characterization Of δ-doping In Gaas And Gaas/siBasmaji P.; Ceschin A.M.; Siu Li M.; Hipolito O.; Bernussi A.A.; IIkawa F.; Motisuke P.-Artigo de periódico
1988Photoluminescence Of Gaas Films Grown By Vacuum Chemical EpitaxyBernussi A.A.; Barreto C.L.; Carvalho M.M.G.; Motisuke P.-Artigo de periódico
1988Optical And Structural Properties Of Polycrystalline Cdse Deposited On Titanium SubstratesCerdeira F.; Torriani I.; Motisuke P.; Lemos V.; Decker F.-Artigo de periódico
1988Infrared Photoluminescence At Deep Centres In Polycrystalline Cdse LayersBrasil M.J.S.; Motisuke P.; Decker F.; Moro J.R.-Artigo de periódico
1987Three-dimensional Quantum-size Effect In Chemically Deposited Cadmium Selenide FilmsHodes G.; Albu-Yaron A.; Decker F.; Motisuke P.-Artigo de periódico
1990Direct Analysis Of The Photocurrent Transient In Semi-insulating GaasBrasil M.J.S.P.; Motisuke P.-Artigo de periódico
1975Hot Electron And Hot Phonon Contributions To Radiative Emission Spectra In Cds At High Excitation IntensitiesMotisuke P.; Arguello C.A.; Leite R.C.C.-Artigo de periódico
1991Properties Of Alxga1-xas With An Alas Buffer Layer On Si Substrates Grown By Metalorganic Vapor Phase EpitaxyBernussi A.A.; Iikawa F.; Motisuke P.; Basmaji P.-Artigo de periódico