Browsing by Author Teixeira R.C.

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Showing results 1 to 11 of 11
PreviewIssue DateTitleAuthor(s)AdvisorType
2008Dc Performance And Low Frequency Noise In N-mosfets Using Self-aligned Poly-si/sige GateJimenez H.G.; Manera L.T.; Teixeira R.C.; Rautemberg M.F.; Diniz J.A.; Doi I.; Tatsch P.J.; Figueroa H.E.; Swart J.W.-Artigo de evento
2005Low Electrical Resistivity Polycrystalline Sige Films Obtained By Vertical Lpcvd For Mos DevicesTeixeira R.C.; Doi I.; Zakia M.B.P.; Diniz J.A.; Swart J.W.-Artigo de evento
1996Hb Camperdown [α2β2104(g6)arg→ser] Identified By Dna Analysis In A Brazilian FamilyMiranda S.R.P.; Kimura E.M.; Teixeira R.C.; Bertuzzo C.S.; Ramalho A.S.; Saad S.T.O.; Costa F.F.-Artigo de periódico
2005Thermal Stability Of Ni(pt) Silicide Films Formed On Poly-siDoi I.; Teixeira R.C.; Santos R.E.; Diniz J.A.; Swart J.W.; Santos Filho S.G.-Artigo de evento
2007Structural And Surface Properties Of Si1-xgex Thin Films Obtained By Reduced Pressure CvdTeixeira R.C.; Doi I.; Diniz J.A.; Swart J.W.; Zakia M.B.P.-Artigo de periódico
2004Micro-raman Stress Characterization Of Polycrystalline Silicon Films Grown At High TemperatureTeixeira R.C.; Doi I.; Zakia M.B.P.; Diniz J.A.; Swart J.W.-Artigo de periódico
2005Morphological And Electrical Study Of Poly-sige Alloy Deposited By Vertical LpcvdTeixeira R.C.; Doi I.; Zakia M.B.P.; Diniz J.A.-Artigo de evento
1999Hemoglobin Screening: Response Of A Brazilian Community To Optional Programs [triagem De Hemoglobinopatias: Resposta De Uma Comunidade Brasileira A Programas Opcionais.]Ramalho A.S.; de Paiva e Silva R.B.; Teixeira R.C.; Compri M.B.-Artigo de periódico
2006Cv Characteristics Of Polycrystalline Sige Films With Low Ge ConcentrationTeixeira R.C.; Doi I.; Diniz J.A.; Swart J.W.; Pinto Zakia M.B.-Artigo de periódico
2006Morphological Study Of Polycrystalline Sige Alloy Deposited By Vertical LpcvdTeixeira R.C.; Doi I.; Diniz J.A.; Swart J.W.; Zakia M.B.P.-Artigo de evento
2005Silicon Oxide Sacrificial Layer For Mems ApplicationsBiasotto C.; Boscoli F.A.; Teixeira R.C.; Ramos A.C.S.; Diniz J.A.; Daltrini A.M.; Moshkalyov S.A.; Doi I.-Artigo de evento