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|Type:||Artigo de periódico|
|Title:||Study Of Ion-induced Secondary Photon Emission In Reactive Ion Etching Experiment|
|Abstract:||Optical emission spectroscopy with high spatial resolution was employed for the study of surface sputtering under reactive ion etching conditions in chlorine-containing gas mixtures. Secondary photon emission (both atomic and molecular) from the processed material was found to be strongly localized near the surface. A simple model, considering the observed features of the secondary photon emission as induced by ion sputtering of the processed surface, has been presented. This technique can give new opportunities for in-situ diagnostics and modeling of plasma-surface interaction in various plasma technologies.|
|Citation:||Japanese Journal Of Applied Physics, Part 1: Regular Papers And Short Notes And Review Papers. , v. 36, n. 7 SUPPL. B, p. 4675 - 4681, 1997.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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