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|Type:||Artigo de evento|
|Title:||Ingaas/gaas/ingap Quantum Well Laser With Etched Mirrors Obtained By Electron Cyclotron Resonance Plasma|
Von Zuben A.A.
de Carvalho M.M.G.
|Abstract:||InGaAs/GaAs quantum well lasers with InGaP cladding layer were grown by chemical beam epitaxy (CBE). Low transparency current of J tr = 150 A/cm 2 and optical loss of 50 cm -1 were obtained for broad-area lasers with conventional cleaved facets. Lasers with mirrors obtained by electron cyclotron resonance plasma (ECR) etching were fabricated. Threshold current of 200 and 325 mA were obtained for lasers 40 μm wide and cavity length of 300 and 200 μm, respectively.|
|Editor:||IEEE, Piscataway, NJ, United States|
|Citation:||Sbmo/ieee Mtt-s International Microwave And Optoelectronics Conference Proceedings. Ieee, Piscataway, Nj, United States, v. 1, n. , p. 13 - 15, 1999.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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