Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/101263
Type: Artigo de evento
Title: Ingaas/gaas/ingap Quantum Well Laser With Etched Mirrors Obtained By Electron Cyclotron Resonance Plasma
Author: Mestanza S.N.M.
Von Zuben A.A.
Frateschi N.C.
Bettini J.
de Carvalho M.M.G.
Abstract: InGaAs/GaAs quantum well lasers with InGaP cladding layer were grown by chemical beam epitaxy (CBE). Low transparency current of J tr = 150 A/cm 2 and optical loss of 50 cm -1 were obtained for broad-area lasers with conventional cleaved facets. Lasers with mirrors obtained by electron cyclotron resonance plasma (ECR) etching were fabricated. Threshold current of 200 and 325 mA were obtained for lasers 40 μm wide and cavity length of 300 and 200 μm, respectively.
Editor: IEEE, Piscataway, NJ, United States
Citation: Sbmo/ieee Mtt-s International Microwave And Optoelectronics Conference Proceedings. Ieee, Piscataway, Nj, United States, v. 1, n. , p. 13 - 15, 1999.
Rights: fechado
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033294886&partnerID=40&md5=8e1c8d048a543cff72d034fc9ae0224d
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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