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|Type:||Artigo de periódico|
|Title:||The Protective Effect Of Thin Amorphous Hydrogenated Carbon A-c:h Films During Metallisation Of Metal-carbon-oxide-silicon (mcos) Diodes|
|Abstract:||Capacitance-voltage (C-V) characteristics of the as-grown metal(Al)-carbon-oxide(SiO2)-semiconductor(Si) structures are examined at the frequency of 1 MHz and compared with the C-V characteristics of the conventional metal(Al)-SiO2-Si (MOS) structures. The density of the oxide charge Qo/q is extracted from the experimental results. Qo/q was found to be 1×1012cm-2 for the MOS structures and 7×1011cm-2 for the metal-carbon-oxide-silicon structures. This difference can be attributed to the presence of the carbon layer which acts as a protective coating during metallisation of the wafers. © 2003 Elsevier Science Ltd. All rights reserved.|
|Citation:||Microelectronics Journal. , v. 34, n. 9, p. 877 - 880, 2003.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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