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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.identifier.isbn1566775124; 9781566775120pt
dc.typeArtigo de eventopt_BR
dc.titleStudy Of Mode Transitions In Inductively Coupled Plasmaspt_BR
dc.contributor.authorDaltrini A.M.pt_BR
dc.contributor.authorMoshkalyov S.A.pt_BR
dc.contributor.authorMonteiro M.J.R.pt_BR
dc.contributor.authorMachida M.pt_BR
dc.contributor.authorBesseler E.pt_BR
unicamp.authorDaltrini, A.M., Universidade Estadual de Campinas, Unicamp, Center for Semiconductor Components, PO box 6061, Campinas, SP 13083-870, Brazilpt_BR
unicamp.authorMoshkalyov, S.A., Universidade Estadual de Campinas, Unicamp, Center for Semiconductor Components, PO box 6061, Campinas, SP 13083-870, Brazilpt_BR
unicamp.authorMonteiro, M.J.R., Universidade Estadual de Campinas, Unicamp, Center for Semiconductor Components, PO box 6061, Campinas, SP 13083-870, Brazilpt_BR
unicamp.authorMachida, M., Universidade Estadual de Campinas, Unicamp, Physics Institute Gleb Wataghin, PO box 6061, Campinas, SP 13083-970, Brazilpt_BR
unicamp.authorBesseler, E., Universidade Estadual de Campinas, Unicamp, Center for Semiconductor Components, PO box 6061, Campinas, SP 13083-870, Brazilpt_BR
dc.description.abstractThe transitions between low density and high density modes in an inductively coupled plasma reactor were studied by the measurements of different spectral line emissions in Ar plasmas. A described model for metastable atoms shows that the ratio of the emissions Ar 811.5 nm / Ar 750.4 nm is similar to the contribution of metastable ionization in electron production (two-step ionization). Then, the influence of the metastable atoms in the transition triggering was identified, mainly at high pressures. Also, the measurements show that metastable atoms can be a source for the sustaining of the H mode in the hysteresis region. © 2006 The Electrochemical Society.en
dc.relation.ispartofECS Transactionspt_BR
dc.date.issued2006pt_BR
dc.identifier.citationEcs Transactions. , v. 4, n. 1, p. 553 - 562, 2006.pt_BR
dc.language.isoenpt_BR
dc.description.volume4pt_BR
dc.description.issuenumber1pt_BR
dc.description.firstpage553pt_BR
dc.description.lastpage562pt_BR
dc.rightsfechadopt_BR
dc.sourceScopuspt_BR
dc.identifier.issn19385862pt_BR
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-33847618230&partnerID=40&md5=1a0cf5d08c544a1eb4b09fa3e54242a1pt_BR
dc.date.available2015-06-30T18:19:53Z
dc.date.available2015-11-26T14:29:42Z-
dc.date.accessioned2015-06-30T18:19:53Z
dc.date.accessioned2015-11-26T14:29:42Z-
dc.description.provenanceMade available in DSpace on 2015-06-30T18:19:53Z (GMT). No. of bitstreams: 0 Previous issue date: 2006en
dc.description.provenanceMade available in DSpace on 2015-11-26T14:29:42Z (GMT). No. of bitstreams: 0 Previous issue date: 2006en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/103960
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/103960-
dc.identifier.idScopus2-s2.0-33847618230pt_BR
dc.description.referenceCzerwiec, T., Graves, D.B., (2004) J. Phys. D: Appl. Phys, 37, p. 2827pt_BR
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dc.description.referenceA. M. Daltrini et al., in Microelectronics Technology and Devices - SBMicro2005, C. Claeys, J. W. Swart, N. I. Morimoto and P. Verdonck, Editors, PV 05-8, p. 245, The Electrochemical Society Proceedings Series, Pennington, NJ (2005)Boffard, J.B., Lin, C.C., DeJoseph Jr, C.A., (2004) J. Phys. D: Appl. Phys, 37, pp. R143pt_BR
dc.description.referenceChabert, P., (2003) Journal of Applied Physics, 94, p. 76pt_BR
dc.description.referenceLieberman, M.A., Lichtenberg, A.J., (1994) Principles of Plasma Discharges and Materials Processing, , Wiley Interscience, New Yorkpt_BR
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