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|Type:||Artigo de evento|
|Title:||Sem/eds Characterization Of Ni And Ni/pt Silicide Formation|
|Author:||Dos Santos R.E.|
Dos Santos Filho S.G.
|Abstract:||Ni and Ni(Pt) suicides have been used as a crucial part of ultra-high speed CMOS technologies. Nisi has many advantages to be a suitable candidate to self-align contact for ULSI devices. The Ni(Pt) suicide present all good NiSi characteristics and also the improved thermal stability. This paper investigates the agglomeration formation on Ni and Ni(Pt) silicides thin films and its material compositions. The samples were characterized by Scanning Electron Microscopy (SEM) with an Energy Dispersive Spectroscopy (EDS). NiSi exhibited high surface precipitate formation around 600°C, and Ni(Pt)Si low precipitate formations up to 820°C and film degradations at annealing temperatures around 900°C. EDS analysis revealed the composition of the agglomerations of NiSi films as consisted of Si and Ni, being the Si the major constitutive element of the agglomerates in 600°C films and Ni of the agglomerates in 820°C films. The agglomerations of Ni(Pt)Si films formed at 900°C are consisted of Si, Ni and Pt, with Si and Ni(Pt) in large quantities characterizing the agglomerations as Ni(Pt) silicide. Moreover, EDS spectra taken in the region out of agglomerations show a very high quantities of Si against a low quantities of Ni and Pt, indicating high degradation of the film with less Ni(Pt) silicide layer on Si. © 2006 The Electrochemical Society.|
|Citation:||Ecs Transactions. , v. 4, n. 1, p. 443 - 451, 2006.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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