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dc.identifier.isbn1566775124; 9781566775120pt
dc.typeArtigo de eventopt_BR
dc.titleSem/eds Characterization Of Ni And Ni/pt Silicide Formationpt_BR
dc.contributor.authorDos Santos R.E.pt_BR
dc.contributor.authorDoi I.pt_BR
dc.contributor.authorSwart J.W.pt_BR
dc.contributor.authorDos Santos Filho S.G.pt_BR
unicamp.authorDos Santos, R.E., School of Electrical and Computer Engineering (FEEC), Center for Semiconductor Components (CCS), State University of Campinas (UNICAMP), Campinas-SP, Brazilpt_BR
unicamp.authorDoi, I., School of Electrical and Computer Engineering (FEEC), Center for Semiconductor Components (CCS), State University of Campinas (UNICAMP), Campinas-SP, Brazilpt_BR
unicamp.authorSwart, J.W., School of Electrical and Computer Engineering (FEEC), Center for Semiconductor Components (CCS), State University of Campinas (UNICAMP), Campinas-SP, Brazilpt_BR Santos Filho, S.G., Laboratory of Integrated Systems (LSI), Polytechnic School, University of São Paulo (USP), São Paulo-SP, Brazilpt
dc.description.abstractNi and Ni(Pt) suicides have been used as a crucial part of ultra-high speed CMOS technologies. Nisi has many advantages to be a suitable candidate to self-align contact for ULSI devices. The Ni(Pt) suicide present all good NiSi characteristics and also the improved thermal stability. This paper investigates the agglomeration formation on Ni and Ni(Pt) silicides thin films and its material compositions. The samples were characterized by Scanning Electron Microscopy (SEM) with an Energy Dispersive Spectroscopy (EDS). NiSi exhibited high surface precipitate formation around 600°C, and Ni(Pt)Si low precipitate formations up to 820°C and film degradations at annealing temperatures around 900°C. EDS analysis revealed the composition of the agglomerations of NiSi films as consisted of Si and Ni, being the Si the major constitutive element of the agglomerates in 600°C films and Ni of the agglomerates in 820°C films. The agglomerations of Ni(Pt)Si films formed at 900°C are consisted of Si, Ni and Pt, with Si and Ni(Pt) in large quantities characterizing the agglomerations as Ni(Pt) silicide. Moreover, EDS spectra taken in the region out of agglomerations show a very high quantities of Si against a low quantities of Ni and Pt, indicating high degradation of the film with less Ni(Pt) silicide layer on Si. © 2006 The Electrochemical Society.en
dc.relation.ispartofECS Transactionspt_BR
dc.identifier.citationEcs Transactions. , v. 4, n. 1, p. 443 - 451, 2006.pt_BR
dc.description.provenanceMade available in DSpace on 2015-06-30T18:19:54Z (GMT). No. of bitstreams: 0 Previous issue date: 2006en
dc.description.provenanceMade available in DSpace on 2015-11-26T14:29:48Z (GMT). No. of bitstreams: 0 Previous issue date: 2006en
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