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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.identifier.isbn1566775124; 9781566775120pt
dc.typeArtigo de eventopt_BR
dc.titleSem/eds Characterization Of Ni And Ni/pt Silicide Formationpt_BR
dc.contributor.authorDos Santos R.E.pt_BR
dc.contributor.authorDoi I.pt_BR
dc.contributor.authorSwart J.W.pt_BR
dc.contributor.authorDos Santos Filho S.G.pt_BR
unicamp.authorDos Santos, R.E., School of Electrical and Computer Engineering (FEEC), Center for Semiconductor Components (CCS), State University of Campinas (UNICAMP), Campinas-SP, Brazilpt_BR
unicamp.authorDoi, I., School of Electrical and Computer Engineering (FEEC), Center for Semiconductor Components (CCS), State University of Campinas (UNICAMP), Campinas-SP, Brazilpt_BR
unicamp.authorSwart, J.W., School of Electrical and Computer Engineering (FEEC), Center for Semiconductor Components (CCS), State University of Campinas (UNICAMP), Campinas-SP, Brazilpt_BR
unicamp.author.externalDos Santos Filho, S.G., Laboratory of Integrated Systems (LSI), Polytechnic School, University of São Paulo (USP), São Paulo-SP, Brazilpt
dc.description.abstractNi and Ni(Pt) suicides have been used as a crucial part of ultra-high speed CMOS technologies. Nisi has many advantages to be a suitable candidate to self-align contact for ULSI devices. The Ni(Pt) suicide present all good NiSi characteristics and also the improved thermal stability. This paper investigates the agglomeration formation on Ni and Ni(Pt) silicides thin films and its material compositions. The samples were characterized by Scanning Electron Microscopy (SEM) with an Energy Dispersive Spectroscopy (EDS). NiSi exhibited high surface precipitate formation around 600°C, and Ni(Pt)Si low precipitate formations up to 820°C and film degradations at annealing temperatures around 900°C. EDS analysis revealed the composition of the agglomerations of NiSi films as consisted of Si and Ni, being the Si the major constitutive element of the agglomerates in 600°C films and Ni of the agglomerates in 820°C films. The agglomerations of Ni(Pt)Si films formed at 900°C are consisted of Si, Ni and Pt, with Si and Ni(Pt) in large quantities characterizing the agglomerations as Ni(Pt) silicide. Moreover, EDS spectra taken in the region out of agglomerations show a very high quantities of Si against a low quantities of Ni and Pt, indicating high degradation of the film with less Ni(Pt) silicide layer on Si. © 2006 The Electrochemical Society.en
dc.relation.ispartofECS Transactionspt_BR
dc.date.issued2006pt_BR
dc.identifier.citationEcs Transactions. , v. 4, n. 1, p. 443 - 451, 2006.pt_BR
dc.language.isoenpt_BR
dc.description.volume4pt_BR
dc.description.issuenumber1pt_BR
dc.description.firstpage443pt_BR
dc.description.lastpage451pt_BR
dc.rightsfechadopt_BR
dc.sourceScopuspt_BR
dc.identifier.issn19385862pt_BR
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-33847683714&partnerID=40&md5=04f478d3e46e0fdf0f80c775f170fdd2pt_BR
dc.date.available2015-06-30T18:19:54Z
dc.date.available2015-11-26T14:29:48Z-
dc.date.accessioned2015-06-30T18:19:54Z
dc.date.accessioned2015-11-26T14:29:48Z-
dc.description.provenanceMade available in DSpace on 2015-06-30T18:19:54Z (GMT). No. of bitstreams: 0 Previous issue date: 2006en
dc.description.provenanceMade available in DSpace on 2015-11-26T14:29:48Z (GMT). No. of bitstreams: 0 Previous issue date: 2006en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/103963
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/103963-
dc.identifier.idScopus2-s2.0-33847683714pt_BR
dc.description.referenceJ.H.Sim, H.C. Wen, J.P. Lu, and D.L Kwong, Dual Work Function Metal Gate Using Full Nickel Silicidation Of Doped Poly-Si., IEEE Electron Device Letters,Vol24, No10, October, 2003Deng, F., Johnson, R.A., Asbeck, P.M., Law, S.S., Dubbelday, W.B., Hsiao, T., Woo, J., Salicidation process using NiSi and its device applications (1997) J. Appl. Phys, 81, p. 8047pt_BR
dc.description.referenceZhang, S.L., Lavoie, C., Cabral Jr., C., Harper, J.M., d'Heurle, F.M., Jordan-Sweet, J., In situ characterization of titanium silicide formation: The effect of Mo interlayer, temperature ramp-rate, and annealing atmosphere (1999) J. Appl. Phys, 85, p. 2617pt_BR
dc.description.referenceTaur, Y., Davari, B., Moy, D., Sun, J.Y., Ting, C.Y., Study of contact and shallow junction characteristics in submicron CMOS with self-aligned Titanium Silicide (1987) IBM J. RES. Develo, 31 (6), p. 627pt_BR
dc.description.referencePoon, M.C., Ho, C.H., Deng, F., Lau, S.S., Wong, H., Thermal stability of cobalt and nickel silicides (1998) Microelectron. Reliab, 38, p. 1495pt_BR
dc.description.referenceMorimoto, T., Ohguro, T., Momose, H.S., Iinuma, T., Kunishima, I., Suguro, K., Katakabe, I., Iwai, H., Self-aligned nickel mono-silicide technology for high speed deep submicrometer logic CMOS ULSI (1995) IEEE Trans. Electron Devices, 42, p. 915pt_BR
dc.description.referenceLiu, J.F., Chen, H.B., Feng, J.Y., Zhu, I., Improvement of the thermal stability of NiSi films by using a thin Pt interlayer (2000) Appl. Phys. Lett, 77 (14), p. 2177pt_BR
dc.description.referenceLee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Chan, L., New salicidation technology with Ni(Pt) alloy for MOSFETs (2001) IEEE Electron Device Letters, 22 (12), p. 568pt_BR
dc.description.referenceXu, D.-X., Das, S.R., Peters, C.J., Erickson, L.E., Materials aspects of nickel silicide for ULSI applications (1998) Thin Solid Films, 326, p. 143pt_BR
dc.description.referenceJulius, B.A., Knoesen, D., Pretorius, R., Adams, D., A study of the NiSi to NiSi2 transition in the Ni-Si binary system (1999) Thin Solid Films, 347, p. 201pt_BR
dc.description.referenced'Heurle, F.M., Nucleation of a new phase from the interaction of two adjacent phases', some silicides (1998) J. Mater. Res, 3, p. 167pt_BR
dc.description.referenceMangelinck, D., Dai, J.Y., Pan, J.S., Lahari, S.K., Enhancement of thermal stability of NiSi films on (100) Si and (111) Si by Pt addition (1999) Appl. Phys. Lett, 75 (12), p. 1736pt_BR
dc.description.referenceLiu, J.F., Feng, J.Y., Zhu, J., Comparison of the thermal stability of NiSi films in Ni/Pt?(111)Si and Ni/Pt/(100)Si systems (2001) J. Appl. Phys, 90 (2), p. 745pt_BR
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