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|Type:||Artigo de evento|
|Title:||Reactive Ion Etching Of Polycrystalline Silicon Using Thinning Technology In Fluorine Based Mixtures|
|Abstract:||This work presents the results of the study of etching profile evolution using the thinning technology for Si-poly structures with SF6/CF 4/CHF3 gas mixtures. Structures with a aspect ratio (height/width) up to 5 and widths in the range of 0.1-0.3 μm were produced. High anisotropy of etched Si-poly structures (anisotropy factor up to 0.92-0.98) was demostrated. The method can be used for fabrication of sub-micron Si-poly gates in CMOS. © 2006 The Electrochemical Society.|
|Citation:||Ecs Transactions. , v. 4, n. 1, p. 525 - 534, 2006.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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