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|Type:||Artigo de periódico|
|Title:||Nonabrupt Interface Related Exciton Energy Shifts In Gan/alxga1-xn Quantum Dots|
|Author:||Ribeiro Filho J.|
De Sousa J.S.
|Abstract:||The existence of smooth interfaces was observed to change considerably the confined carriers energy levels and exciton energies in GaN/AlxGa1-xN quantum dots. The results were obtained within the framework of the effective-mass theory. It was observed a shift of the ground-state exciton energy about 27 meV if a 10 angstroms wide smooth interface exists in a GaN/Al0.3Ga0.7N dot with 50 angstroms of radius. This is a realistic case considering that interface widths are actually about this magnitude.|
|Editor:||Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland|
|Citation:||Materials Science Forum. Trans Tech Publ Ltd, Uetikon-zuerich, Switzerland, v. 338, n. , p. II/ - , 2000.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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