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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.typeArtigo de periódicopt_BR
dc.titleMicrocrystalline Diamond Deposition On A Porous Silicon Host Matrixpt_BR
dc.contributor.authorBaranauskas V.pt_BR
dc.contributor.authorTosin M.C.pt_BR
dc.contributor.authorPeterlevitz A.C.pt_BR
dc.contributor.authorCeragioli H.J.pt_BR
dc.contributor.authorDurrant S.F.pt_BR
unicamp.authorBaranauskas, V., Faculdade de Engenharia, Brazil, Universidade Estadual de Campinas, Avenida Albert Einstein N. 400, 13083-970 Campinas SP, Brazilpt_BR
unicamp.author.externalTosin, M.C., Faculdade de Engenharia, Brazilpt
unicamp.author.externalPeterlevitz, A.C., Faculdade de Engenharia, Brazilpt
unicamp.author.externalCeragioli, H.J., Faculdade de Engenharia, Brazilpt
unicamp.author.externalDurrant, S.F., Faculdade de Engenharia, Brazilpt
dc.description.abstractPorous silicon (PS) is a nanostructured material obtained by etching pores into crystalline Si wafers. In this paper, we report on the nucleation and growth of diamond on very thick PS films (130-220 μm) of very high porosity (10-50%). The edges of the pores were in the form of small crosses, which followed the original directions of the 〈100〉c-Si. The diamond coating was made by chemical vapor deposition (CVD) in a hot-filament reactor. We observed that the diamond nucleation occurs mainly at the edges of the pores but relatively few nuclei follow a preferential orientation axis. As the nucleation density is very low, coalescence does not occur even after 11 h and 30 min of deposition. Using a pre-deposition `seeding' process with diamond grains, it was possible to produce a complete diamond CVD coating. A cross-section analysis of the diamond/PS/c-Si structure by scanning electron microscopy (SEM), micro-Raman and photoluminescence spectroscopies revealed interesting results: the luminescence of the PS under the diamond layer is preserved. There is no diamond deposition inside of the pores, but a small permeation of carbon was identified which forms diamond-like phases at the bottom of the pores. The Raman analyses indicated also a small contamination of the diamond layer by Si nano-crystals.en
dc.relation.ispartofMaterials Science and Engineering B: Solid-State Materials for Advanced Technologypt_BR
dc.date.issued2000pt_BR
dc.identifier.citationMaterials Science And Engineering B: Solid-state Materials For Advanced Technology. , v. 69, n. , p. 171 - 176, 2000.pt_BR
dc.language.isoenpt_BR
dc.description.volume69pt_BR
dc.description.firstpage171pt_BR
dc.description.lastpage176pt_BR
dc.rightsfechadopt_BR
dc.sourceScopuspt_BR
dc.identifier.issn9215107pt_BR
dc.identifier.doi10.1016/S0921-5107(99)00255-Xpt_BR
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0033896302&partnerID=40&md5=b9d9c732a89d9b092e9153ef89f10862pt_BR
dc.date.available2015-06-30T19:49:58Z
dc.date.available2015-11-26T14:46:58Z-
dc.date.accessioned2015-06-30T19:49:58Z
dc.date.accessioned2015-11-26T14:46:58Z-
dc.description.provenanceMade available in DSpace on 2015-06-30T19:49:58Z (GMT). No. of bitstreams: 1 2-s2.0-0033896302.pdf: 857609 bytes, checksum: ea65057755c4b56cef9250347b6ac129 (MD5) Previous issue date: 2000en
dc.description.provenanceMade available in DSpace on 2015-11-26T14:46:58Z (GMT). No. of bitstreams: 1 2-s2.0-0033896302.pdf: 857609 bytes, checksum: ea65057755c4b56cef9250347b6ac129 (MD5) Previous issue date: 2000en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/107170
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/107170-
dc.identifier.idScopus2-s2.0-0033896302pt_BR
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dc.description.referenceLyer, S.B., Srinivas, S., (1997) Thin Solid Films, 305, p. 259pt_BR
dc.description.referenceBaranauskas, V., Chang, D.C., Li, B.B., Peterlevitz, A.C., Trava-Airoldi, V.J., Corat, E.J., Singh, R.K., Lee, D.-G., (2000) J. Porous Mater., 7, p. 401pt_BR
dc.description.referenceBaranauskas, V., Li, B.B., Peterlevitz, A.C., Trava-Airoldi, V.J., Corat, E.J., Singh, R.K., (1998) 14th International Vacuum Congress, , Birmingham, UKpt_BR
dc.description.referenceBaranauskas, V., Li, B.B., Peterlevitz, A.C., (1998) Diamond Science and Technology, la Jolla International School of Physics, 10 (12). , Bulletin of the Stefan Universitypt_BR
dc.description.referenceBaranauskas, V., Peled, A., Trava-Airoldi, V.J., Lima, C.A.S., Doi, I., Corat, J., (1994) Appl. Surf. Sei., 79-80, p. 129pt_BR
dc.description.referenceBaranauskas, V., Li, B.B., Peterlevitz, A.C., Tosin, M.C., Durrant, S.F., (1999) Thin Solid Films, 351, p. 1pt_BR
dc.description.referenceDavies, G., Collins, A.T., (1993) Diam. Rel. Mater., 2, p. 80pt_BR
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