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|Title:||Characterization Of Pecvd A-c:h:si:o:cl Films|
|Abstract:||Thin films were produced by plasma enhanced chemical vapor deposition of tetramethylsilane, chloroform, and argon mixtures. The partial pressure of chloroform in the chamber feed, CCl, was varied from 0% to 40%. Amorphous hydrogenated carbon films also containing silicon, oxygen, and small amounts of chlorine, a-C:H:Si:O:Cl, were produced at deposition rates of up to about 220 nm min−1 (for a CCl of 40%). Transmission infrared analyses revealed the presence of OH groups in chlorinated films, along with, among others, CH, C=C, Si-CH, Si-CH2, and Si-O-Si groups. As revealed by energy dispersive x-ray spectroscopy, the films could be doped with chlorine to a maximum of about 3 at. %. Surface morphology and roughness were examined using scanning electron microscopy and atomic force microscopy. Tauc band gaps, calculated from transmission ultraviolet-visible near infrared spectra, tend to decrease from ∼3.4 eV for unchlorinated films to around 2.5 eV for those doped with chlorine. © 2017 American Vacuum Society.|
|Editor:||AVS Science and Technology Society|
|Citation:||Journal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films. Avs Science And Technology Society, v. 35, n. 4, p. , 2017.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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