Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: A curvature-compensated CMOS voltage reference using V-th(2) characteristics
Author: Dias, JAS
do Amaral, WA
de Moraes, WB
Abstract: A novel technique for the design of very low temperature coefficient (TC) voltage references in a CMOS standard process is presented. The proposed circuit uses an all CMOS technique to generate a low TC voltage reference over a wide temperature range. A self-biased V-th (threshold voltage) generator circuit creates a voltage equal to the V-th of a CMOS transistor; this voltage is used to generate a current proportional to V-th(2), that, when forced into another transistor, creates a voltage which presents a negative non-linear temperature coefficient. A voltage with a positive TC, which can be controlled by the aspect ratio of a pair of transistors, is generated by a current mirror asymmetrically degenerated with a high-poly resistor. A curvature correction, provided by a current proportional to V-th(2), is used to modify the thermal behaviour of this positive TC voltage. By adding the positive and negative TCs voltages, a very stable reference voltage can be obtained. The circuit was designed to be implemented in a standard CMOS process (AMS 0.35 mu m), and simulated results indicate that a variation of only 2.5 ppm/degrees C is expected over the temperature range of 0-90 degrees C. (C) 2009 Elsevier Ltd. All rights reserved.
Subject: CMOS voltage reference
Temperature coefficient
Analogue circuits
Curvature compensation
Country: Inglaterra
Editor: Elsevier Sci Ltd
Citation: Microelectronics Journal. Elsevier Sci Ltd, v. 40, n. 12, n. 1772, n. 1778, 2009.
Rights: fechado
Identifier DOI: 10.1016/j.mejo.2009.10.001
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000273105300013.pdf582.74 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.