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Type: Artigo de periódico
Title: A Patterning-Based Strain Engineering for Sub-22 nm Node FinFETs
Author: Schmidt, M
Suess, MJ
Barros, AD
Geiger, R
Sigg, H
Spolenak, R
Minamisawa, RA
Abstract: We propose a strain engineering approach that is based on the patterning and under etching of fins using strained Si grown on SiGe strain relaxed buffers. The method enhances the strain of the patterned Fins up to similar to 2.9 GPa without the need of epitaxial source and drain stressors. We report a systematic simulation study on the scaling of this method for the present and future technology nodes down to 7 nm. Finally, we estimate that the technique deliveries an electron mobility enhancement up to 87% for FinFETs, independent of the technology node.
Subject: Strained Si
Country: EUA
Editor: Ieee-inst Electrical Electronics Engineers Inc
Citation: Ieee Electron Device Letters. Ieee-inst Electrical Electronics Engineers Inc, v. 35, n. 3, n. 300, n. 302, 2014.
Rights: fechado
Identifier DOI: 10.1109/LED.2014.2300865
Date Issue: 2014
Appears in Collections:Unicamp - Artigos e Outros Documentos

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