Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/89623
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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.typeArtigo de periódicopt_BR
dc.titleTuning Resistive Switching On Single-pulse Doped Multilayer Memristorspt_BR
dc.contributor.authorSiles P.F.pt_BR
dc.contributor.authorDe Pauli M.pt_BR
dc.contributor.authorBof Bufon C.C.pt_BR
dc.contributor.authorFerreira S.O.pt_BR
dc.contributor.authorBettini J.pt_BR
dc.contributor.authorSchmidt O.G.pt_BR
dc.contributor.authorMalachias A.pt_BR
unicamp.authorDe Pauli, M., Laboratório Nacional de Luz Síncrotron, LNLS, CP 6192, Campinas, Brazil, Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, UNICAMP, SP, Brazilpt_BR
unicamp.author.externalSiles, P.F., Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany, Material Systems for Nanoelectronics, TU Chemnitz, Reichenhainerstraße 70, 09107 Chemnitz, Germany, Laboratório Nacional de Luz Síncrotron, LNLS, CP 6192, Campinas, Brazilpt
unicamp.author.externalBof Bufon, C.C., Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany, Laboratório Nacional de Nanotecnologia, LNNano, CP 6192, Campinas, Brazilpt
unicamp.author.externalFerreira, S.O., Laboratório Nacional de Luz Síncrotron, LNLS, CP 6192, Campinas, Brazil, Departamento de Física, Universidade Federal de Viçosa, Minas Gerais, Viçosa, Brazilpt
unicamp.author.externalBettini, J., Laboratório Nacional de Luz Síncrotron, LNLS, CP 6192, Campinas, Brazilpt
unicamp.author.externalSchmidt, O.G., Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany, Material Systems for Nanoelectronics, TU Chemnitz, Reichenhainerstraße 70, 09107 Chemnitz, Germanypt
unicamp.author.externalMalachias, A., Laboratório Nacional de Luz Síncrotron, LNLS, CP 6192, Campinas, Brazil, Departamento de Física, Universidade Federal de Minas Gerais, MG, Belo Horizonte, Brazilpt
dc.description.abstractShort-period multilayers containing ultrathin atomic layers of Al embedded in titanium dioxide (TiO2) film - here called single-pulse doped multilayers - are fabricated by atomic layer deposition (ALD) growth methods. The approach explored here is to use Al atoms through single-pulsed deposition to locally modify the chemical environment of TiO2 films, establishing a chemical control over the resistive switching properties of metal/oxide/metal devices. We show that this simple methodology can be employed to produce well-defined and controlled electrical characteristics on oxide thin films without compound segregation. The increase in volume of the embedded Al2O3 plays a crucial role in tuning the conductance of devices, as well as the switching bias. The stacking of these oxide compounds and their use in electrical devices is investigated with respect to possible crystalline phases and local compound formation via chemical recombination. It is shown that our method can be used to produce compounds that cannot be synthesized a priori by direct ALD growth procedures but are of interest due to specific properties such as thermal or chemical stability, electrical resistivity or electric field polarization possibilities. The monolayer doping discussed here impacts considerably on the broadening of the spectrum of performance and technological applications of ALD-based memristors, allowing for additional degrees of freedom in the engineering of oxide devices. © 2013 IOP Publishing Ltd.en
dc.relation.ispartofNanotechnologypt_BR
dc.date.issued2013pt_BR
dc.identifier.citationNanotechnology. , v. 24, n. 3, p. - , 2013.pt_BR
dc.language.isoenpt_BR
dc.description.volume24pt_BR
dc.description.issuenumber3pt_BR
dc.rightsfechadopt_BR
dc.sourceScopuspt_BR
dc.identifier.issn9574484pt_BR
dc.identifier.doi10.1088/0957-4484/24/3/035702pt_BR
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84871605201&partnerID=40&md5=aaad628c44ae5772f12747229e057da4pt_BR
dc.date.available2015-06-25T19:17:50Z
dc.date.available2015-11-26T15:15:50Z-
dc.date.accessioned2015-06-25T19:17:50Z
dc.date.accessioned2015-11-26T15:15:50Z-
dc.description.provenanceMade available in DSpace on 2015-06-25T19:17:50Z (GMT). No. of bitstreams: 0 Previous issue date: 2013en
dc.description.provenanceMade available in DSpace on 2015-11-26T15:15:50Z (GMT). No. of bitstreams: 0 Previous issue date: 2013en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/89623
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/89623-
dc.identifier.idScopus2-s2.0-84871605201pt_BR
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