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|Type:||Artigo de evento|
|Title:||The Influence Of Poly-si/sige Gate In Threshold, Sub-threshold Parameters And Low Frequency Noise In P-mosfets|
|Abstract:||DC performance and Low Frequency Noise in p-MOS transistor with poly-Si/SiGe Gate fabricated with the CMOS process entirely developed in the Center for Semiconductor Components at UNICAMP is presented. After deposition, films of poly-Si and poly SiGe were implanted by phosphorus ions. The transistor has a channel region with silicon oxide thickness of 30 nm and a poly-Si/SiGe gate region with self-aligned thick S/D region. The parameters on threshold, sub-threshold and low frequency noise (1/f) of poly-Si/SiGe p-MOS transistor are reported. The turn-on in the I-V characteristics increases and at a drain-to-source bias V DS of -0.1 V p-MOSFETs with L poly=1.57μm gate length had peak transconductance (G m) increased as well, compared with conventional p-MOS with poly-Si gate. The DC and 1/f characteristics of the p-MOS transistors are studied using several devices sizes. Devices show low 1/f and high values for G m parameters and make them promising devices for RF and microwave circuit applications. © The Electrochemical Society.|
|Citation:||Ecs Transactions. , v. 23, n. 1, p. 371 - 380, 2009.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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