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Type: Artigo de evento
Title: Thermal Stability Of Ni(pt) Silicide Films Formed On Poly-si
Author: Doi I.
Teixeira R.C.
Santos R.E.
Diniz J.A.
Swart J.W.
Santos Filho S.G.
Abstract: The stability of Ni silicide films formed with a thin interlayer of Pt onto poly-Si layer has been investigated in a wide range of silicidation temperatures between 350 and 900 °C and post-silicidation heat treatments between 500 and 1000 °C, using different characterization techniques to analyze the surface, cross-section interfaces and electrical characteristics. Formation of uniform and stable Ni(Pt)Si/poly-Si layered structures with low sheet resistances of about 5 Ω/sq. were observed up to 700 °C annealing temperature, except those obtained at 350 °C that presented a sheet resistance of 22 Ω/sq. At high temperatures, as-silicided and heat treated samples exhibited a drastic increase of the sheet resistance at 800/850 °C, respectively, due to the layer inversion and degradation of the morphology. © 2005 Elsevier B.V. All rights reserved.
Citation: Microelectronic Engineering. , v. 82, n. 3-4 SPEC. ISS., p. 485 - 491, 2005.
Rights: fechado
Identifier DOI: 10.1016/j.mee.2005.07.047
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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