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|Type:||Artigo de evento|
|Title:||Thermal Stability Of Ni(pt) Silicide Films Formed On Poly-si|
Santos Filho S.G.
|Abstract:||The stability of Ni silicide films formed with a thin interlayer of Pt onto poly-Si layer has been investigated in a wide range of silicidation temperatures between 350 and 900 °C and post-silicidation heat treatments between 500 and 1000 °C, using different characterization techniques to analyze the surface, cross-section interfaces and electrical characteristics. Formation of uniform and stable Ni(Pt)Si/poly-Si layered structures with low sheet resistances of about 5 Ω/sq. were observed up to 700 °C annealing temperature, except those obtained at 350 °C that presented a sheet resistance of 22 Ω/sq. At high temperatures, as-silicided and heat treated samples exhibited a drastic increase of the sheet resistance at 800/850 °C, respectively, due to the layer inversion and degradation of the morphology. © 2005 Elsevier B.V. All rights reserved.|
|Citation:||Microelectronic Engineering. , v. 82, n. 3-4 SPEC. ISS., p. 485 - 491, 2005.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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