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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.typeArtigo de eventopt_BR
dc.titleThermal Stability Of Ni(pt) Silicide Films Formed On Poly-sipt_BR
dc.contributor.authorDoi I.pt_BR
dc.contributor.authorTeixeira R.C.pt_BR
dc.contributor.authorSantos R.E.pt_BR
dc.contributor.authorDiniz J.A.pt_BR
dc.contributor.authorSwart J.W.pt_BR
dc.contributor.authorSantos Filho S.G.pt_BR
unicamp.authorDoi, I., FEEC-UNICAMP, P.O. Box. 6101, CEP 13083-852, Campinas-SP, Brazil, CCS-UNICAMP, P.O. Box 6061, CEP 13083-870, Campinas-SP, Brazilpt_BR
unicamp.authorTeixeira, R.C., FEEC-UNICAMP, P.O. Box. 6101, CEP 13083-852, Campinas-SP, Brazil, CCS-UNICAMP, P.O. Box 6061, CEP 13083-870, Campinas-SP, Brazilpt_BR
unicamp.authorSantos, R.E., FEEC-UNICAMP, P.O. Box. 6101, CEP 13083-852, Campinas-SP, Brazil, CCS-UNICAMP, P.O. Box 6061, CEP 13083-870, Campinas-SP, Brazilpt_BR
unicamp.authorDiniz, J.A., FEEC-UNICAMP, P.O. Box. 6101, CEP 13083-852, Campinas-SP, Brazil, CCS-UNICAMP, P.O. Box 6061, CEP 13083-870, Campinas-SP, Brazilpt_BR
unicamp.authorSwart, J.W., FEEC-UNICAMP, P.O. Box. 6101, CEP 13083-852, Campinas-SP, Brazil, CCS-UNICAMP, P.O. Box 6061, CEP 13083-870, Campinas-SP, Brazilpt_BR
unicamp.author.externalSantos Filho, S.G., LSI-USP, R. Luciano Gualberto, 158, CEP 05508-900, S. Paulo-SP, Brazilpt
dc.description.abstractThe stability of Ni silicide films formed with a thin interlayer of Pt onto poly-Si layer has been investigated in a wide range of silicidation temperatures between 350 and 900 °C and post-silicidation heat treatments between 500 and 1000 °C, using different characterization techniques to analyze the surface, cross-section interfaces and electrical characteristics. Formation of uniform and stable Ni(Pt)Si/poly-Si layered structures with low sheet resistances of about 5 Ω/sq. were observed up to 700 °C annealing temperature, except those obtained at 350 °C that presented a sheet resistance of 22 Ω/sq. At high temperatures, as-silicided and heat treated samples exhibited a drastic increase of the sheet resistance at 800/850 °C, respectively, due to the layer inversion and degradation of the morphology. © 2005 Elsevier B.V. All rights reserved.en
dc.relation.ispartofMicroelectronic Engineeringpt_BR
dc.date.issued2005pt_BR
dc.identifier.citationMicroelectronic Engineering. , v. 82, n. 3-4 SPEC. ISS., p. 485 - 491, 2005.pt_BR
dc.language.isoenpt_BR
dc.description.volume82pt_BR
dc.description.issuenumber3-4 SPEC. ISS.pt_BR
dc.description.firstpage485pt_BR
dc.description.lastpage491pt_BR
dc.rightsfechadopt_BR
dc.sourceScopuspt_BR
dc.identifier.issn1679317pt_BR
dc.identifier.doi10.1016/j.mee.2005.07.047pt_BR
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-28044469664&partnerID=40&md5=997b5b6ac0de5853c0850fff3d33467fpt_BR
dc.date.available2015-06-26T14:07:09Z
dc.date.available2015-11-26T15:41:27Z-
dc.date.accessioned2015-06-26T14:07:09Z
dc.date.accessioned2015-11-26T15:41:27Z-
dc.description.provenanceMade available in DSpace on 2015-06-26T14:07:09Z (GMT). No. of bitstreams: 1 2-s2.0-28044469664.pdf: 439801 bytes, checksum: d91c4721c1fbef8ee69f0a9d9fff7eaa (MD5) Previous issue date: 2005en
dc.description.provenanceMade available in DSpace on 2015-11-26T15:41:27Z (GMT). No. of bitstreams: 2 2-s2.0-28044469664.pdf: 439801 bytes, checksum: d91c4721c1fbef8ee69f0a9d9fff7eaa (MD5) 2-s2.0-28044469664.pdf.txt: 17053 bytes, checksum: beeb653e5cb9e2268663c2bb8d88ee73 (MD5) Previous issue date: 2005en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/93284
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/93284-
dc.identifier.idScopus2-s2.0-28044469664pt_BR
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