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|Type:||Artigo de evento|
|Title:||Mechanisms Of Silicon Nitride Etching By Electron Cyclotron Resonance Plasmas Using Sf6- And Nf3-based Gas Mixtures|
|Abstract:||The results of a comparitive study of SiNx, SiO2 and Si etching in SF6 - and NF3 --based gas mixtures were presented using a high-density electron cyclotron resonance (ECR) plasma. It was shown that higher selectivities of SiNx etching over SiO2 (up to ∼100) were achieved with NF3, while higher selectivities over Si were obtained with SF6-based mixtures. The plasma and surface processes responsible for etching were analyzed. The mechanisms of nitride etching in NF3-based plasmas were also proposed.|
|Citation:||Journal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films. , v. 22, n. 4, p. 1513 - 1518, 2004.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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