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|Type:||Artigo de evento|
|Title:||Silicon Oxynitride Gate-dielectric Made By Ecr Plasma Oxynitridation|
|Abstract:||Silicon oxynitride (SiOxNy) insulators have been grown using O2/N2/Ar gas mixtures at room temperature (20°C), in a wide pressure range (5, 10, 20 and 50mTorr) and 1000 W microwave power electron cyclotron resonance (ECR) plasma on Si substrates. The thickness values between 1.8 nm and 6.3 nm were determined by ellipsometry. Fourier transform infra-red (FTIR) spectrometry analyses reveal the chemical bonds in the silicon oxynitride films, indicating that the oxynitrides grown at medium pressures, between 10 and 20 mTorr, presented less nitrogen content than those grown at 5 and 50 mTorr. Optical emission spectroscopy (OES) was used for plasma characterization, and intense formation of NO molecules in the gas phase was detected. These molecules can play significant role in formation of the oxynitride layer and the resulting N/O ratio in the surface layer. The C-V characteristics of Al/Ti/SiQxNy/Si specimens were obtained and the EOT (equivalent oxide thickness) values were determined, with values being between 0.52 and 2.9 nm. The electrical characteristics were compared and correlated with the nitrogen/oxygen concentrations at SiOxN y/Si structures and physical thickness, obtained by FTIR and ellipsometry, respectively.|
|Citation:||Proceedings - Electrochemical Society. , v. 3, n. , p. 253 - 258, 2004.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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