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|Type:||Artigo de evento|
|Title:||Selective Etching Of Polycrystalline Silicon In A Hexode Type Plasma Etcher|
|Abstract:||Plasma etching is a powerful tool for production of anisotropic structures with sub-micron/nano critical dimensions. Besides the anisotropy, another important requirement for a high quality etching process in Poly-silicon gate etching is its selectivity over thin underlying SiO2 layer. This paper reports our first results obtained in etching of polycrystalline silicon with semi-industrial hexode etcher. High poly-siIicon/SiO2 etch selectivity is obtained. The end-point of process is successfully detected using the laser interferometry technique.|
|Citation:||Proceedings - Electrochemical Society. , v. 3, n. , p. 363 - 368, 2004.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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