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|Type:||Artigo de periódico|
|Title:||A-sixge1-x:h Thin Films|
|Abstract:||In this work we study some optical and electronic properties of hydrogenated amorphous silicon-germanium alloys (a-SixGe1-x:H) deposited by co-sputtering. Thin films were deposited varying silicon concentration (estimated) from 0 up-to 10 at. %. The room temperature dark conductivity changes by more than one order of magnitude with increasing silicon content, while the changes in optical properties are less expressive. The main results concerning the thin film properties, as well as the main problems related to Schottky barriers (metal/semiconductor) performance are discussed.|
|Citation:||Brazilian Journal Of Physics. , v. 26, n. 1, p. 363 - 366, 1996.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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