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Type: Artigo de evento
Title: Effect Of Plasma Conditions On Reactive Ion Etching Of Gaas In Cl2/ar
Author: Moshkalyov S.A.
Machida M.M.
Lebedev S.V.
Campos D.O.
Abstract: This report discusses results of a study of the parameters of plasma used for GaAs/Cl2 RIE. The parameters were studied using emission spectroscopy. The observed features of GaAs RIE are explained on the basis of a model including chemical and ion-stimulated components of the process.
Editor: IEEE, Piscataway, NJ, United States
Citation: Ieee International Conference On Plasma Science. Ieee, Piscataway, Nj, United States, v. , n. , p. 173 - , 1996.
Rights: fechado
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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