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|Type:||Artigo de periódico|
|Title:||Surface Morphologies Of Be-doped Homoepitaxial Inp Films|
De Carvalho M.M.G.
De Souza C.F.
|Abstract:||We present here a study on the growth of Be-doped InP films by metalorganic molecular beam epitaxy, showing changes in morphology related to the presence of the dopant on the growing surface. The actual Be concentration in the films reaches (1-2) × 1019 cm-3 while the hole concentration saturates at a lower value (∼ 2 × 1018 cm-3 in our case). A negative lattice mismatch between film and substrate and non-uniform cathodoluminescence intensity are observed for samples grown at high growth temperatures and Be flux. The resulting changes in morphology suggest that the excess Be forms microclusters in the films grown at higher temperatures - due to the higher surface mobility, leading to the growth of oval defects. The surfaces of samples with no cap layer present a granulation which may be related to a reaction between Be and P at the growth temperature.|
|Citation:||Journal Of Crystal Growth. , v. 164, n. 1-4, p. 409 - 414, 1996.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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