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|Type:||Artigo de periódico|
|Title:||Electronic Structure Of Amorphous Germanium-nitrogen Alloys: A Uv Photoelectron Spectroscopy Study|
|Abstract:||The valence band and Ge 3d core-level structure of amorphous germanium-nitrogen alloys (a-Ge1-xNx) of various compositions (0 < x < 0.36) have been studied by ultraviolet photoelectron spectroscopy using He I and He II excitation. Two N-related bands centered at about 11 and 5 eV below the Fermi energy are found to evolve in the valence band spectra with increasing x. These are attributed to N 2p bonding and lone-pair states, respectively. A systematic shift and broadening of the Ge 3d core level peaks occurs with increasing x. Analysis of this effect allows for the determination of a N-induced chemical shift per Ge-N bond of 0.30 ± 0.08 eV. For x > 0.22, a significant recession of the top of the valence band sets in, which is correlated by the sudden increase of the optical gap. An asymmetrical widening of the band gap for x > 0.22 is deduced.|
|Citation:||Journal Of Non-crystalline Solids. , v. 198-200, n. PART 1, p. 136 - 139, 1996.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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