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|Type:||Artigo de periódico|
|Title:||Spatially Variable Reaction In The Formation Of Anodically Grown Porous Silicon Structures|
Dos Santos M.C.
|Abstract:||In porous silicon formations there is an increase of dissolution rate at the fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from oxidation of molecular hydrogen at the passivated (hydrogen-covered) sites. The dissolution rate increase in the presence of excess charge at the fluorine-covered sites is experimentally measured and a theoretical investigation is carried out by a semiempirical Hartree-Fock calculation. This spatially variable dissolution generates the porous silicon surface. © 1995 American Institute of Physics.|
|Citation:||Journal Of Applied Physics. , v. 78, n. 1, p. 590 - 592, 1995.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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