Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/97052
Full metadata record
DC FieldValueLanguage
dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.identifier.isbn9783037854907pt
dc.typeArtigo de eventopt_BR
dc.titleSilicon Carbide Surface Modification By Nitrogen Plasma Expanderpt_BR
dc.contributor.authorSantos C.N.pt_BR
dc.contributor.authorMarins E.M.pt_BR
dc.contributor.authorMachida M.pt_BR
dc.contributor.authorde Campos E.pt_BR
dc.contributor.authorMota R.P.pt_BR
dc.contributor.authorMelo F.C.L.pt_BR
dc.contributor.authorOliveira Hein L.R.pt_BR
unicamp.authorMachida, M., Instituto de Física, UNICAMP, Campinas, SP, Brazilpt_BR
unicamp.author.externalSantos, C.N., DFQ, Faculdade de Engenharia, UNESP, Guaratinguetá, SP, Brazilpt
unicamp.author.externalMarins, E.M., Escola de Especialistas de Aeronáutica (EEAR), Guaratinguetá, SP, Brazilpt
unicamp.author.externalde Campos, E., Escola de Especialistas de Aeronáutica (EEAR), Guaratinguetá, SP, Brazilpt
unicamp.author.externalMota, R.P., DFQ, Faculdade de Engenharia, UNESP, Guaratinguetá, SP, Brazilpt
unicamp.author.externalMelo, F.C.L., AMR, Divisão de Materiais, Instituto de Aeronáutica e Espaço, São José dos Campos, SP, Brazilpt
unicamp.author.externalOliveira Hein, L.R., DFQ, Faculdade de Engenharia, UNESP, Guaratinguetá, SP, Brazilpt
dc.description.abstractSilicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950°C under argon gas atmosphere. Silicon carbide (β-SiC - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement. © (2012) Trans Tech Publications, Switzerland.en
dc.relation.ispartofMaterials Science Forumpt_BR
dc.date.issued2012pt_BR
dc.identifier.citationMaterials Science Forum. , v. 727-728, n. , p. 1428 - 1432, 2012.pt_BR
dc.language.isoenpt_BR
dc.description.volume727-728pt_BR
dc.description.firstpage1428pt_BR
dc.description.lastpage1432pt_BR
dc.rightsfechadopt_BR
dc.sourceScopuspt_BR
dc.identifier.issn2555476pt_BR
dc.identifier.doi10.4028/www.scientific.net/MSF.727-728.1428pt_BR
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84869392570&partnerID=40&md5=2178a227d86465d692aeb91370585afdpt_BR
dc.description.sponsorship Abbott,Air Products,Ametek,Basf,Brats,Et al.pt_BR
dc.date.available2015-06-26T20:29:29Z
dc.date.available2015-11-26T14:26:04Z-
dc.date.accessioned2015-06-26T20:29:29Z
dc.date.accessioned2015-11-26T14:26:04Z-
dc.description.provenanceMade available in DSpace on 2015-06-26T20:29:29Z (GMT). No. of bitstreams: 0 Previous issue date: 2012en
dc.description.provenanceMade available in DSpace on 2015-11-26T14:26:04Z (GMT). No. of bitstreams: 0 Previous issue date: 2012en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/97052
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/97052-
dc.identifier.idScopus2-s2.0-84869392570pt_BR
dc.description.referenceErcenk, E., Sen, U., Yilmaz, S., (2011) Ceramics International, 37, p. 883pt_BR
dc.description.referenceMolian, P., Baerga, V.R., (2011) Advances in Applied Ceramics, 110, p. 120pt_BR
dc.description.referenceLiu, X., Zhoo, X., Fu, R.K.Y., Ho, J.P.Y., Ding, C., Chu, P.K., (2005) Biomaterials, 26, p. 6143pt_BR
dc.description.referenceChaim, R., (2007) Materials Science and Engineering A, 443, p. 25pt_BR
dc.description.referenceShen, Z., Johnsson, M., Zhoo, Z., Nygren, M., (2002) Journal of the American Ceramic Society, 85, p. 1921pt_BR
dc.description.referenceXiem, N.T., Kroisová, D., Louda, P., Hung, T.D., Rozek, Z., (2009) Journal of Achievements in Materials and Manufacturing Engineering, 37, p. 526pt_BR
dc.description.referenceFu, R.K.Y., Fu, K.L., (2004) Journal of Vacuum Science and Technology A, 22, p. 356pt_BR
dc.description.referenceCeschini, L., Lanzoni, E., Martini, C., Prandstraller, D., Sambogna, G., (2008) Wear, 264, p. 86pt_BR
dc.description.referenceBittencourt, J.A., (1986) Fundamentals of Plasma Physics, , Edited by Pergamon Press, Oxfordpt_BR
dc.description.referenceYasuda, H., (1985) Plasma Polymerization, , Edited by Academic Press, Inc., New Yorkpt_BR
dc.description.referenceManos, D.M., Flamm, D.L., (1989) Plasma etching: An introduction, , Edited by Academic Press, San Diego, C. Apt_BR
dc.description.referenceZeldovich, Y.B., Raizer, Y.P., (2002) Physics of shock waves and high temperature hydrodinamic Phenomena, , Edited by Dover Publications, Inc., New Yorkpt_BR
dc.description.referenceMamum, A.A., Shukla, P.K., (2011) EPL Journal, 94, p. 65002. , doi: 10.1209/0295-5075/94/65002pt_BR
dc.description.referenceRocha, R.M., Melo, F.C.L., (2008) Materials Science Forum, 593, p. 493pt_BR
dc.description.referenceMarins, E.M., (2008) Optimization and microstructural analysis of silicon carbide ceramics obtained of the national materials to ballistic armor application, , Doctorate (Thesis). Guaratinguetá, Universidade Estadual Paulista (UNESP). (SP). (In Portuguese)pt_BR
dc.description.referenceNavaneetha Pandiyaraj, K., Selvarajan, V., Deshmukh, R.R., Bousmina, M., (2008) Surface and Coatings Technology, 202, p. 4220pt_BR
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.