Please use this identifier to cite or link to this item:
|Type:||Artigo de evento|
|Title:||Ultrafast Relaxation Of Hot Carriers In Cdse|
Brito Cruz C.H.
|Abstract:||Results of the measurement of hot electron relaxation in CdSe are reported. The measurements were performed using the standard pump-probe technique with both pump and probe light at 620 nm (1.98 eV). The pulses were generated by a balanced colliding-pulse mode-locked (CPM) laser and had a duration of 40 fs at a repetition rate of 82 MHz. The sample was a 1-μm-thick polycrystalline film. The results show that the observed relaxation time increases with the density of injected carriers in the range from 2.0 × 10 16 to 3.1 × 10 18 cm -3. This is explained by considering the combined effects of band filling, screening, and absorption line broadening due to carrier-carrier scattering.|
|Editor:||Publ by IEEE, Piscataway, NJ, United States|
|Citation:||. Publ By Ieee, Piscataway, Nj, United States, v. , n. , p. 54 - 55, 1989.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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