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|Type:||Artigo de periódico|
|Title:||Transport In Photoexcited Hot Carriers Systems|
|Abstract:||The question of how the evolution of the nonequilibrium state of a highly photoexcited plasma in polar semiconductors (HEPS) affects the mobility of its hot carriers (photoinjected electrons and holes) is considered. General analytic expressions for the mobility, valid for a large class of experimental situations, are derived. That allows for an in depth analysis of transport properties of hot carriers in HEPS: It is demonstrated that, depending on initial conditions and experimental constraints, four different types of transient behavior may occur, namely, (i) structure (relative maxima and minima) without overshoot and a near ohmic regime in the steady state at low field intensities, (ii) structure with overshoot and non-ohmic regime in the steady state at intermediate field intensities, (iii) overshoot (no structure) and strongly non-ohmic regime at intermediate to high fields, and, (iv) normal (monotonicly increasing current) with ohmic behavior in the steady state at high fields. A general criterion for the existence of structure and/or overshoot during the mobility transient is established. Numerical calculations appropriate for electron transport in the central valley of GaAs are presented. © 1988.|
|Citation:||Solid State Electronics. , v. 31, n. 3-4, p. 497 - 499, 1988.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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