Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Photoelectrochemical Etching Of N-inp Producing Antireflecting Structures For Solar Cells|
|Abstract:||Photoelectrochemical (PEC) etching of n-InP is studied as a method to engrave relief microstructures. Experiments of PEC etching were performed with holographic exposures (λ = 0.4579 μm) and homogeneous white light on n-InP. The triangular profile characteristic of holographic patterns recorded parallel to the 〈011〉 direction appeared even when the sample was etched using homogenous white light. In this case deep random microstructures were obtained which present interesting antireflection properties that may be useful in solar cell applications. © 1992.|
|Citation:||Solar Energy Materials And Solar Cells. , v. 25, n. 1-2, p. 179 - 189, 1992.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.