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Type: Artigo de periódico
Title: On The Doping Efficiency Of Nitrogen In Hydrogenated Amorphous Germanium
Author: Chambouleyron I.
Zanatta A.R.
Abstract: This letter reports on the doping efficiency of nitrogen in a-Ge:H films of electronic quality. It has been found that nitrogen is an effective dopant in the a-Ge:H network, its doping efficiency being similar to the one corresponding to phosphorus in a-Si:H. The concentration of active nitrogen atoms decreases with impurity content following a square root dependence on total nitrogen. This behavior is similar to the one determined for column V dopants in a-Si:H films of electronic quality.
Citation: Applied Physics Letters. , v. 62, n. 1, p. 58 - 60, 1993.
Rights: aberto
Identifier DOI: 10.1063/1.108818
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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