Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Nitrogen In The Amorphous-germanium Network: From High Dilution To The Alloy Phase
Author: Zanatta A.R.
Chambouleyron I.
Abstract: In this work experimental data referring to the structural and optoelectronic characteristics of amorphous-germanium-nitrogen thin films are presented and discussed. The nitrogen content of the a-Ge:N samples, deposited by the rf-sputtering technique in an Ar+N2 atmosphere, was allowed to vary from typical impurity levels (less than 0.5 at. %) up to around 35 at. %. The material properties change depending on the nitrogen concentration, determined from a deuteron-induced nuclear reaction. The likely mechanisms of nitrogen incorporation into the solid phase are discussed, as well as the influence of the nitrogen content on the transport and optical properties of the films. A proportionality constant relating the total nitrogen concentration in the solid phase and the integrated absorption of the in-plane stretching vibration mode of the Ge-N dipole has been determined. It has been found that a close analogy exists between the general properties of a-Ge:N alloys and those measured in amorphous-silicon-nitrogen alloys. © 1993 The American Physical Society.
Citation: Physical Review B. , v. 48, n. 7, p. 4560 - 4570, 1993.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.48.4560
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-0038807978.pdf484.34 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.